PE-600

High quality silicon oxide and silicon nitride films can be produced by PECVD systems. These are often used as a gate dielectric for field effect transistors. Silicon nitride may also be used as a hard mask for patterning features in III/V semiconductors. Uniformity of better than 3% on 6" wafers can be routinely achieved, with controllable refractive index (from 1.96 to 2.01 

       Feature

• 6 inch 3 wafer simultaneously deposition
• Uniform process gas flow distribution(Center pumping type)
• Robotic arm for 3 wafer handling
• Top electrode RF driven (MHz and/or kHz)
• Heated substrate up to 400℃
• Process chamber heating up to 100℃
• Gas injected into process chamber via “showerhead” gas inlet in the top electrode
• Lower temperature processes compared to conventional CVD
• Film stress can be controlled by high/low frequency mixing techniques
• Dry plasma cleaning process
• SiO2, Si3N4 and SiON deposition for a wide range of applications including
• photonics structures, passivation, hard mask, etc.
• Amorphous silicon (a-Si:H)
• Conformal step coverage, or void-free good step coverage

Diamond-like carbon (DLC)

Process specification

SiO2
1) Dep. rate: > 180nm/min @ General condition
2) Dep. rate: > 150nm/min @ Production condition
3) Within uniformity: < +/- 3%
4) W to W uniformity: < +/- 3%
5) Repeatability : < +/- 3%
5) Refractive Index : 1.458 -1.490 adjustable
6) Wet etch rate(BOE HF:DI = 1:6) : <200nm/min 
7) Breakdown voltage : >5MV
8) Stress : <-0.3GPa compressive
9) Table temp : <300'C

Process specification

Si3N4
1) Within uniformity: < +/- 3%
2) W to W uniformity: < +/- 3%
3) Repeatability : < +/- 3%
4) Refractive Index : 2.00 adjustable @ 250°C
5) Wet etch rate : < 80nm/min @ 6:1 BOE
6) Stress : <+/- 100MPa
7) Table temp : < 250'C