High quality silicon oxide and silicon nitride films can be produced by PECVD systems. These are often used as a gate dielectric for field effect transistors. Silicon nitride may also be used as a hard mask for patterning features in III/V semiconductors. Uniformity of better than 3% on 6" wafers can be routinely achieved, with controllable refractive index (from 1.96 to 2.01
6 inch 3 wafer simultaneously deposition
Uniform process gas flow distribution(Center pumping type)
Robotic arm for 3 wafer handling
Top electrode RF driven (MHz and/or kHz)
Heated substrate up to 400¡É
Process chamber heating up to 100¡É
Gas injected into process chamber via “showerhead” gas inlet in the top electrode
Lower temperature processes compared to conventional CVD
Film stress can be controlled by high/low frequency mixing techniques
Dry plasma cleaning process
SiO2, Si3N4 and SiON deposition for a wide range of applications including
photonics structures, passivation, hard mask, etc.
Amorphous silicon (a-Si:H)
Conformal step coverage, or void-free good step coverage
Diamond-like carbon (DLC)
Process specification
SiO2
1) Dep. rate: > 180nm/min @ General condition
2) Dep. rate: > 150nm/min @ Production condition
3) Within uniformity: < +/- 3%
4) W to W uniformity: < +/- 3%
5) Repeatability : < +/- 3%
5) Refractive Index : 1.458 -1.490 adjustable
6) Wet etch rate(BOE HF:DI = 1:6) : <200nm/min
7) Breakdown voltage : >5MV
8) Stress : <-0.3GPa compressive
9) Table temp : <300'C