Highest Capacity LED Etcher

Optimized For PSS Process and DBR Oxide etching

• Compact dimension
   - W1290 x L2900 x H2300 (unit :mm)

• Superior and Unique large size ICP antenna
   - Outstanding power distribution balance
   - Unetched ICP insulator by uniform power distribution effect
   - Decreased particles by unetched ICP insulator
   - Imroved plasma density uniformity between center and outter
   - Available to 500mm substrate size
   - Excellent PSS uniformity <±3% at 500mm substrate size

• ATM Load-Lock

• TM with Buffer chamber for mass production

• World Top capacity Highest throughput
   - 12 wafers x 4” for PSS
   - 13 wafers x 4” for GaN & Oxide
   - 5 wafers x 6” for PSS
   - 6 wafers x 6” for GaN & Oxide



• Excellent uniformity
   - Uniform gas flow and gas injection distributor
   - Pumping configuration for uniform gas dispersion(Center pumping)
   - Optimized etching space
   - <±3% Wafer to Wafer and Batch to Batch