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Highest Capacity LED Etcher
Optimized For PSS Process and DBR Oxide etching
• Compact dimension - W1290 x L2900 x H2300 (unit :mm)
• Superior and Unique large size ICP antenna - Outstanding power distribution balance - Unetched ICP insulator by uniform power distribution effect - Decreased particles by unetched ICP insulator - Imroved plasma density uniformity between center and outter - Available to 500mm substrate size - Excellent PSS uniformity <±3% at 500mm substrate size
• ATM Load-Lock
• TM with Buffer chamber for mass production
• World Top capacity Highest throughput - 12 wafers x 4” for PSS - 13 wafers x 4” for GaN & Oxide - 5 wafers x 6” for PSS - 6 wafers x 6” for GaN & Oxide

• Excellent uniformity - Uniform gas flow and gas injection distributor - Pumping configuration for uniform gas dispersion(Center pumping) - Optimized etching space - <±3% Wafer to Wafer and Batch to Batch
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